Allicdata Part #: | S29GL512T10FAI013-ND |
Manufacturer Part#: |
S29GL512T10FAI013 |
Price: | $ 4.31 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FLASH 512M PARALLEL |
More Detail: | FLASH - NOR Memory IC 512Mb (64M x 8) Parallel 10... |
DataSheet: | S29GL512T10FAI013 Datasheet/PDF |
Quantity: | 1000 |
1600 +: | $ 3.91230 |
Specifications
Series: | GL-T |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 512Mb (64M x 8) |
Write Cycle Time - Word, Page: | 60ns |
Access Time: | 100ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Description
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?S29GL512T10FAI013 Memory
The S29GL512T10FAI013 is a type of non-volatile memory, sometimes referred to as flash memory, created and distributed by Toshiba. This type of memory is used in a variety of devices, as it is more reliable and has a longer life span than many other types of memory.The S29GL512T10FAI013 is a 512Mb CMOS NAND Flash memory chip. It is a 3.3V device and is organized in eight 128Mbit groups. It has a variety of features, such as Blocking for lockable and low power erase, Sector protection for 256 byte protection, and fast program/erase for high speed writing and erasing. It also offers a wide range of access times, from 20ns in synchronous mode and 85ns in asynchronous mode.The main application for the S29GL512T10FAI013 is in embedded system design. It is often used in mobile phones, digital cameras, and other electronics. It can also be used in automotive and aviation systems, where its low power erase capability is useful.The Working Principle of S29GL512T10FAI013 is based on a NAND Flash architecture, which stores and reads data in a manner very similar to a Hard Disk Drive. The operating system on the device reads and writes data to the flash memory chip in a sequence of logically addressed blocks. Data is written to the memory chip in a write cycle and is read from the memory chip in a read cycle.The data stored in NAND Flash memory is randomly accessed, meaning that every block can be accessed and read independently. NAND Flash stores data in cells, which are arranged in array format, and these cells contain one bit of information. NAND Flash memory is therefore capable of very high speeds.In conclusion, the S29GL512T10FAI013 offers an attractive combination of features, including high performance, low power consumption, and a wide range of access times. It is suitable for a variety of applications, from embedded systems to mobile devices. Its NAND Flash architecture provides high read and write speeds, making it an excellent choice for many applications.The specific data is subject to PDF, and the above content is for reference
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