Allicdata Part #: | RN2102ACT(TPL3)TR-ND |
Manufacturer Part#: |
RN2102ACT(TPL3) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS PREBIAS PNP 0.1W CST3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | RN2102ACT(TPL3) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 80mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 150mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 500nA |
Power - Max: | 100mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-101, SOT-883 |
Supplier Device Package: | CST3 |
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The RN2102ACT (TPL3) is a single, pre-biased transistor in the “Bipolar Junction Transistor” (BJT) family of transistors. It is designed to provide a low-impedance output with guaranteed input-to-output matching. The transistor has a base-emitter voltage of 4.5 V, a total supply voltage of 8 V, a total current gain of 1000, and an output voltage of 150 mV. It is capable of operating up to a frequency of 200 MHz.
The RN2102ACT has two significant advantages over other BJT transistors; firstly, it has a low junction capacitance which allows it to operate in a wide frequency range and secondly, its pre-biased characteristic enables it to reach instantaneous stability at high frequencies. The pre-biased gate means that the gate voltage is applied to the transistor from start-up, resulting in an extremely low time of reaching full stability.
The RN2102ACT is a versatile transistor and has a wide variety of applications. The most common applications include RF and mixed-signal amplification, frequency selection, motor-control, and power conversion. Its pre-biased characteristic also makes it well suited for applications where high frequency stability and speed are paramount, such as communications applications, video and audio applications, and mobile computing applications.
The RN2102ACT is also well suited for a range of power conversion applications due to its high current gain, low power consumption, and low junction capacitance. Its pre-biased characteristic ensures that it can respond quickly to changes in the power supply voltage. Furthermore, the pre-bias also minimizes switching losses, resulting in high efficiency and reduced energy costs.
In terms of its working principle, the RN2102ACT uses the basic components of a BJT, including the collector, base, and emitter. When an input signal is applied to the base of the transistor, a small current passes through the collector-emitter junction. This current is amplified by the current gain of the transistor, resulting in an output signal at the collector. The transistor can also be used as an amplifier depending on the type of connections, allowing for more complex circuits.
In summary, the RN2102ACT (TPL3) is a single, pre-biased transistor in the BJT family which has a wide variety of applications. Its low junction capacitance and pre-biased characteristic make it well suited for high frequency and power conversion applications, while its moderate current gain and low power consumption make it suitable for general purpose transistor circuits. This makes the RN2102ACT an ideal choice for applications where frequency stability and speed are important.
The specific data is subject to PDF, and the above content is for reference
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