Allicdata Part #: | KSC838YBU-ND |
Manufacturer Part#: |
KSC838YBU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 30V 0.03A TO-92 |
More Detail: | Bipolar (BJT) Transistor NPN 30V 30mA 250MHz 250mW... |
DataSheet: | KSC838YBU Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 30mA |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Vce Saturation (Max) @ Ib, Ic: | 400mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 2mA, 12V |
Power - Max: | 250mW |
Frequency - Transition: | 250MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | KSC838 |
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The KSC838YBU, or bipolar junction transistor (BJT), is a type of transceiver that is used to transmit and receive electronic signals. This type of device is commonly used in digital communication circuits, such as those found in modern computer systems. The KSC838YBU is a single-die, multistage BJT with an array of small transistors, each comprising a single PNP epitaxial planar device.
The KSC838YBU is a widely used device, typically found in telecom, computers, consumer electronics, automotive, and industrial-type applications, as well as various other applications that require robust reliability and low-power circuits.
The KSC838YBU’s small size and relatively low cost make it an attractive option for engineers and system designers. Its main advantages over other types of transistor include improved linearity, higher-frequency operation, narrower bandwidths, and better signal-to-noise performance.
The KSC838YBU typically features an emitter, base and collector, and is operated in the linear region, meaning that the device has the ability to control both voltage and current. When an input voltage is applied to the base, a current is generated between the emitter and collector. This current is proportional to the input voltage, thus resulting in greater power efficiency. The device is also capable of providing voltage gain, since the voltage across the collector and the emitter is higher than the input voltage. Therefore, a very small amount of current supplied to the base can produce a relatively larger current at the collector.
The KSC838YBU utilizes two transistors in tandem, connected emitter-to-collector. This arrangement allows the device to regulate both the current and voltage. The two transistors are typically biased such that their characteristics are different – the first transistor works to amplify the input signal, while the second transistor works to reduce the gain while providing a return path for the signal.
In addition to the application field above, the KSC838YBU may also be used in RF and optical applications where an increased current handling capacity is important. Additionally, the device can also be used for power amplification and signal conversion. The KSC838YBU’s wide-range linearity makes it suitable for use in modulation circuits, DC servos, and power amplifiers.
In conclusion, the KSC838YBU is a versatile and low cost self-contained BJT. Its ability to regulate both voltage and current make it suitable for a wide variety of applications, particularly those found in telecom and computer systems. Furthermore, its wide linearity range makes it suitable for RF and optical applications, as well as DC servos, power amplifiers, and modulation circuits.
The specific data is subject to PDF, and the above content is for reference
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