2SB1203T-H-TL-E

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The 2SB1203T-H-TL-E is a PNP general-purpose transistor made offered by ROHM Semiconductor. It is a high-speed, low-saturation general-purpose PNP transistor whose characteristics are the same as that of a high-current low-saturation PNP transistor. As its main features, it has a high breakdown voltage, high current capacity, and low collector-emitter forward saturation voltage.

The 2SB1203T-H-TL-E falls into the category of Transistors - Bipolar (BJT) - Single. As its name implies, it\'s a single transistor that is composed of two p-type semiconductor layers connected between the collector and base and one n-type semiconductor layer interconnected between the emitter and the base.

The main application field of the 2SB1203T-H-TL-E is audio frequency amplification (AF) and generally small-signal applications such as low-frequency amplifiers, pre-amplifiers, impults, analog integrators, and oscillators. It can be used in audio frequency amplifier applications in which gain and high frequency noise figures are important. It is also suitable for use in applications such as low-frequency amplifiers, RF selections and voltage amplifiers.

The 2SB1203T-H-TL-E also has some combination applications, such as interface circuits, motor driver, switching and pulse amplifiers, class A and B power amplifiers, and analog-to-digital (A/D) converters. It can also be used to create digital-to-analog (D/A) converters, which convert digital signals into analog signals, and voltage-to-current (V/I) converters, which are used to convert voltage signals into current signals.

The 2SB1203T-H-TL-E works on the principle of β-current control. In this circuit, the base current of the transistor is controlled by the amount of current injected into it. The current is controlled by an external bias voltage, typically applied at the base of the transistor. As the base current increases, the collector-emitter current increases proportionally and the collector-emitter voltage decreases, thus allowing the current to flow through the transistor.

The 2SB1203T-H-TL-E is a PNP transistor, in which the flow of current is in the direction of the emitter to the collector, rather than in the direction of the collector to the emitter. This transistors works with a positive voltage at its base with respect to its emitter and can handle larger currents than the NPN transistors.

The 2SB1203T-H-TL-E is a low voltage transistor, making it suitable for use in devices and applications with supply voltages lower than 12V. Its maximum collector current of 1.0A and maximum collector-emitter voltage of 30V are ideal for small-signal applications, such as low-frequency amplifiers, pre-amplifiers and audio integrators.

The 2SB1203T-H-TL-E is available in TO-92, SOT-23, SOT-323 and SOT-563 packages. It has a wide range of applications and can be used in a wide range of circuit designs. It is a great choice for low-frequency, small-signal and audio applications.

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