STB20NM60D

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The STB20NM60D is a high performance N-channel MOSFET designed for applications requiring low on-state resistance and high-speed switching.

It is a fairly versatile MOSFET, and is useful in a wide range of power management, LED lighting, and general power conversion applications. This includes applications such as motor control, charging circuits, UPS systems, DC-DC converters, and many other industrial and consumer applications.

The STB20NM60D is a N-channel MOSFET, meaning it is a type of transistor with one N-type (n-type) semi-conductor material. As a part of the single-source field-effect transistor (FET) family, the STB20NM60D combines the advantages of both PNP bipolar junction transistors (BJTs) and MOSFETs. Specifically, it offers the fast switching speeds of BJTs, combined with the high current-carrying capability, low on-state resistance, and low voltage drop of MOSFETs.

The STB20NM60D has an on-state resistance of only 132 mΩ, and a drain-source breakdown voltage of 900 V. This combination of characteristics makes the MOSFET ideal for applications that require high current-switching and low on-state resistance. Additionally, the device is characterized for fast turn-on and turn-off switching, with a threshold voltage (V GS ) of 4.5 V and a drain-source on-state current linearity of up to 43 A.

In terms of its working principle, the STB20NM60D utilizes the principle of depletion-mode operation, which is a type of operation used in transistors to control the flow of current. Basically, depletion-mode operation involves two main types of current flow: source-drain current (I D ) and gate current (I G ). When there is no voltage applied to the gate terminal (V GS = 0 V), there is no current flowing through the MOSFET, as the gate-source junction is reverse biased. As the voltage at the gate (V GS ) increases, the depletion region in the MOSFET’s p-n junction becomes narrower, allowing current to flow across the junction and across the device.

The STB20NM60D also has an integrated body diode, which helps to reduce the amount of power used when switching on and off the device. The body diode prevents the build-up of charge in the gate-source junction of the device, which in turn reduces the amount of power used when switching the device on and off.

The STB20NM60D is an ideal choice for a wide range of applications requiring fast switching, low on-state resistance, and high current-switching capabilities. It is particularly suitable for motor control, charging circuits, UPS systems, DC-DC converters, and many other industrial and consumer applications.

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