BZT55B6V8 L1G Allicdata Electronics
Allicdata Part #:

BZT55B6V8L1G-ND

Manufacturer Part#:

BZT55B6V8 L1G

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE ZENER 6.8V 500MW MINI MELF
More Detail: Zener Diode 6.8V 500mW ±2% Surface Mount Mini MELF
DataSheet: BZT55B6V8 L1G datasheetBZT55B6V8 L1G Datasheet/PDF
Quantity: 1000
10000 +: $ 0.01693
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 6.8V
Tolerance: ±2%
Power - Max: 500mW
Impedance (Max) (Zzt): 8 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 3V
Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: Mini MELF
Description

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The BZT55B6V8 L1G diode is a type of Zener diode, a single component device that displays principles of reverse-bias voltage regulation. It is often used to protect sensitive components in circuit boards or for improving the performance of low-voltage systems in automotive and computer equipment. The diode has the following characteristics:

  • Reverse Voltage Standoff Range: 5.6V-6.4V.
  • Power Dissipation: 400mW.
  • Do-35 Package.

The primary purpose of the diode is to protect sensitive components in circuit boards and electronic equipment. It is also used in low-voltage systems, such as those found in automotive, personal computer and other electronic equipment, in order to improve their performance. The diode acts as a "clamp" in order to limit the number of volts running through the circuit, thus protecting delicate components and circuits.

The BZT55B6V8 L1G diode operates on basic principles of reverse-bias voltage regulation. When voltage is applied to the diode, current only flows in the reverse direction when the voltage reaches or exceeds the diode\'s allowable reverse breakdown voltage. At that point, the diode "opens", allowing current to flow through it. The current then passes through the diode until it reaches the specified maximum reverse breakdown voltage, at which point the diode "closes" again.

When the diode is in a high-voltage situation, it provides a "clamp" that limits the amount of current that can pass through the circuit. This helps to protect sensitive components and circuits by limiting the amount of current, thus preventing damage or destruction of the components. In addition, the diode can be used in low-voltage systems to increase the overall efficiency of the system, as it helps to reduce the amount of power lost to voltage drops and improve overall performance.

The BZT55B6V8 L1G diode is also useful for providing a stable and reliable form of reverse-bias voltage regulation. The diode is a single component device that provides a reliable and predictable form of reverse bias voltage regulation. The diode is also an effective method of ensuring that the circuit is not damaged or destroyed by over-voltage or over-current. The diode can also be used to improve the overall performance of low-voltage systems.

In summary, the BZT55B6V8 L1G diode is a single component device that is often used to protect sensitive components in electronic equipment, as well as to improve the overall performance of low-voltage systems. The diode operates on basic principles of reverse-bias voltage regulation, providing a reliable and predictable form of protection and improvement. This makes the diode ideal for use in automotive and computer equipment, as well as in other types of electrical and electronic circuit boards.

The specific data is subject to PDF, and the above content is for reference

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